MOSFETs -20V, -2.2A, Dual P-Channel Power MOSFET
Products specifications
Rds On - Drain-Source Resistance | 115 mOhms |
Vgs - Gate-Source Voltage | 4.5 V |
Configuration | Dual |
Packaging | Cut Tape, Reel |
Pd - Power Dissipation | 1.15 W |
Vds - Drain-Source Breakdown Voltage | 20 V |
Channel Mode | Enhancement |
Qg - Gate Charge | 15.23 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 450 mV |
Id - Continuous Drain Current | 2.2 A |
Transistor Polarity | P-Channel, PNP |
Number of Channels | 2 Channel |
Technology | Si |