MOSFETs -30V, -5.7A, Single P-Channel Power MOSFET
Products specifications
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 5.7 A |
Qg - Gate Charge | 18.09 nC |
Channel Mode | Enhancement |
Packaging | Cut Tape, Reel |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Transistor Polarity | P-Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 38 mOhms |
Pd - Power Dissipation | 1.6 W |