MOSFETs 30V P channel MOSFET
Products specifications
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Id - Continuous Drain Current | 5.7 A |
Qg - Gate Charge | 18.09 nC |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 38 mOhms |
Technology | Si |
Configuration | Single |
Number of Channels | 1 Channel |
Transistor Polarity | P-Channel |
Pd - Power Dissipation | 1.6 W |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 150 C |