MOSFETs 60V, 25A, Single N-Channel Power MOSFET
Products specifications
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Packaging | Reel |
Pd - Power Dissipation | 40 W |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 30 A |
Rds On - Drain-Source Resistance | 28 mOhms |
Minimum Operating Temperature | - |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 60 V |
Qg - Gate Charge | 16.6 nC |
Configuration | Single |
Channel Mode | Enhancement |