TSM3401CX

MOSFET 30V P channel MOSFET

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R 2.71

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MOSFETs 30V P channel MOSFET

Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	9.52 nC
Technology	Si
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	1.7 V
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	50 mOhms
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	3 A
Configuration	Single
Transistor Polarity	P-Channel
Pd - Power Dissipation	1.25 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	9.52 nC
Technology	Si
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	1.7 V
Vds - Drain-Source Breakdown Voltage	30 V
Rds On - Drain-Source Resistance	50 mOhms
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	3 A
Configuration	Single
Transistor Polarity	P-Channel
Pd - Power Dissipation	1.25 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C