MOSFETs 30V, 5.5A, Single N-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Rds On - Drain-Source Resistance | 27 Ohms |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.8 W |
Packaging | Cut Tape, Reel |
Id - Continuous Drain Current | 5.5 A |
Technology | Si |
Vgs - Gate-Source Voltage | 4.5 V |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 8.9 nC |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |