MOSFET 20V P Channel Mosfet with schottky diode
Products specifications
Vds - Drain-Source Breakdown Voltage | 20 V |
Packaging | Reel |
Transistor Polarity | P-Channel |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 6.5 W |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 4.5 A |
Technology | Si |
Rds On - Drain-Source Resistance | 94 mOhms |
Vgs th - Gate-Source Threshold Voltage | 500 mV |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 4.5 V |
Configuration | Single |
Channel Mode | Enhancement |