TSM2NB60CP ROG

MOSFET 600V 2A N Channel Mosfet

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MOSFETs 600V, 2A, Single N-Channel Power MOSFET

Products specifications

Channel Mode	Enhancement
Packaging	Reel
Qg - Gate Charge	9.4 nC
Id - Continuous Drain Current	2 A
Number of Channels	1 Channel
Configuration	Single
Transistor Polarity	N-Channel
Pd - Power Dissipation	44 W
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Technology	Si
Rds On - Drain-Source Resistance	3 Ohms
Vds - Drain-Source Breakdown Voltage	600 V

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Products specifications

Channel Mode	Enhancement
Packaging	Reel
Qg - Gate Charge	9.4 nC
Id - Continuous Drain Current	2 A
Number of Channels	1 Channel
Configuration	Single
Transistor Polarity	N-Channel
Pd - Power Dissipation	44 W
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Technology	Si
Rds On - Drain-Source Resistance	3 Ohms
Vds - Drain-Source Breakdown Voltage	600 V