MOSFETs 600V, 2A, Single N-Channel Power MOSFET
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 2 A |
Vds - Drain-Source Breakdown Voltage | 600 V |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Technology | Si |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Qg - Gate Charge | 9.4 nC |
Configuration | Single |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Rds On - Drain-Source Resistance | 3.9 Ohms |
Pd - Power Dissipation | 44 W |