TSM2N60SCW RPG

MOSFETs 600V, 0.6A, Single N-Channel Power MOSFET
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SKU: TSM2N60SCW RPG

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MOSFETs 600V, 0.6A, Single N-Channel Power MOSFET
Lead Time: 0 Days

Products specifications

Configuration	Single
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	600 mA
Qg - Gate Charge	13 nC
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	3.6 Ohms
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Pd - Power Dissipation	2.5 W

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Products specifications

Configuration	Single
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	600 mA
Qg - Gate Charge	13 nC
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	3.6 Ohms
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Pd - Power Dissipation	2.5 W