MOSFET 600V 2Amp 4ohm N channel Power Mosfet
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Id - Continuous Drain Current | 2 A |
Rds On - Drain-Source Resistance | 3.2 Ohms |
Technology | Si |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, Reel |
Qg - Gate Charge | 9.5 nC |
Pd - Power Dissipation | 52.1 W |
Vgs - Gate-Source Voltage | 10 V |