MOSFET Power MOSFET, N-CHAN 1000V 1.85A 8.5 Ohms
Products specifications
Pd - Power Dissipation | 77 W |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 1.85 A |
Technology | Si |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 30 V |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 1 kV |
Rds On - Drain-Source Resistance | 8.5 Ohms |
Channel Mode | Enhancement |
Qg - Gate Charge | 17 nC |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Maximum Operating Temperature | + 150 C |