MOSFET 1000V, 1.85A, Single N-Channel Power MOSFET
Products specifications
Technology | Si |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 1 kV |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 1.85 A |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 6 Ohms |
Qg - Gate Charge | 17 nC |
Transistor Polarity | N-Channel |
Packaging | Reel |
Pd - Power Dissipation | 77 W |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |