MOSFETs -20V, -6.5A, Single P-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 20 V |
Transistor Polarity | P-Channel |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 6.5 A |
Qg - Gate Charge | 19.5 nC |
Number of Channels | 1 Channel |
Configuration | Single |
Rds On - Drain-Source Resistance | 21 mOhms |
Vgs - Gate-Source Voltage | 4.5 V |
Technology | Si |
Packaging | Cut Tape, Reel |
Vgs th - Gate-Source Threshold Voltage | 300 mV |
Pd - Power Dissipation | 1.56 W |