TSM2537CQ RFG

MOSFET MOSFET Complementary N-Ch, 20V, 11.6A

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MOSFETs 20V, 13A, -20V, -9.5A, Complementary N & P-Channel Power MOSFET
Lead Time: 140 Days

Products specifications

Pd - Power Dissipation	6.25 W, 6.25 W
Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel
Packaging	Cut Tape, Reel
Vgs - Gate-Source Voltage	4.5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Id - Continuous Drain Current	11.6 A, 9 A
Vds - Drain-Source Breakdown Voltage	20 V
Technology	Si
Channel Mode	Enhancement
Qg - Gate Charge	9.1 nC, 9.8 nC
Rds On - Drain-Source Resistance	17 mOhms, 48 mOhms
Vgs th - Gate-Source Threshold Voltage	500 mV, 450 mV

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Products specifications

Pd - Power Dissipation	6.25 W, 6.25 W
Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel
Packaging	Cut Tape, Reel
Vgs - Gate-Source Voltage	4.5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Id - Continuous Drain Current	11.6 A, 9 A
Vds - Drain-Source Breakdown Voltage	20 V
Technology	Si
Channel Mode	Enhancement
Qg - Gate Charge	9.1 nC, 9.8 nC
Rds On - Drain-Source Resistance	17 mOhms, 48 mOhms
Vgs th - Gate-Source Threshold Voltage	500 mV, 450 mV