TSM250N02DCQ RFG

MOSFET 20V Dual N-Channel MOSFET

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MOSFETs 20V, 5.8A, Dual N-Channel Power MOSFET
Lead Time: 112 Days

Products specifications

Channel Mode	Enhancement
Vgs - Gate-Source Voltage	4.5 V
Id - Continuous Drain Current	5.8 A
Vgs th - Gate-Source Threshold Voltage	400 mV
Pd - Power Dissipation	620 mW
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	20 mOhms
Configuration	Dual
Number of Channels	2 Channel
Qg - Gate Charge	7.7 nC
Packaging	Cut Tape, Reel
Vds - Drain-Source Breakdown Voltage	20 V
Technology	Si

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Products specifications

Channel Mode	Enhancement
Vgs - Gate-Source Voltage	4.5 V
Id - Continuous Drain Current	5.8 A
Vgs th - Gate-Source Threshold Voltage	400 mV
Pd - Power Dissipation	620 mW
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	20 mOhms
Configuration	Dual
Number of Channels	2 Channel
Qg - Gate Charge	7.7 nC
Packaging	Cut Tape, Reel
Vds - Drain-Source Breakdown Voltage	20 V
Technology	Si