TSM250N02CX RFG

MOSFET 20V, 5.8A, Single N- Channel Power MOSFET

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R 8.06

R 5.38

R 3.82

R 3.32

R 2.79

R 2.58

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MOSFETs 20V, 5.8A, Single N-Channel Power MOSFET
Lead Time: 112 Days

Products specifications

Transistor Polarity	N-Channel
Pd - Power Dissipation	1.56 W
Vds - Drain-Source Breakdown Voltage	20 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	20 mOhms
Vgs - Gate-Source Voltage	4.5 V
Configuration	Single
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	7.7 nC
Technology	Si
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	400 mV
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	5.8 A

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Products specifications

Transistor Polarity	N-Channel
Pd - Power Dissipation	1.56 W
Vds - Drain-Source Breakdown Voltage	20 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	20 mOhms
Vgs - Gate-Source Voltage	4.5 V
Configuration	Single
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	7.7 nC
Technology	Si
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	400 mV
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	5.8 A