MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Id - Continuous Drain Current | 6.5 A |
Vds - Drain-Source Breakdown Voltage | 30 V |
Qg - Gate Charge | 4.1 nC |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Pd - Power Dissipation | 1.56 W |
Configuration | Single |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 17 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Cut Tape, Reel |
Transistor Polarity | N-Channel |
Technology | Si |