MOSFETs 100V, 1.5A, Single N-Channel Power MOSFET
Lead Time: 210 Days
Products specifications
Rds On - Drain-Source Resistance | 250 mOhms |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Pd - Power Dissipation | 1.38 W |
Id - Continuous Drain Current | 1.5 A |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 11.1 nC |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Packaging | Cut Tape, Reel |