MOSFETs -20V, -4.7A, Single P-Channel Power MOSFET
Products specifications
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4.7 A |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 1.25 W |
Vgs - Gate-Source Voltage | 4.5 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 31 mOhms |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |
Qg - Gate Charge | 12.5 nC |