MOSFETs 40V, 3.9A, Single N-Channel Power MOSFET
Products specifications
Number of Channels | 1 Channel |
Pd - Power Dissipation | 1.25 W |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 10 nC |
Configuration | Single |
Rds On - Drain-Source Resistance | 36 mOhms |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 3.9 A |
Vds - Drain-Source Breakdown Voltage | 40 V |
Packaging | Cut Tape, Reel |
Vgs th - Gate-Source Threshold Voltage | 1 V |