MOSFETs 20V, 4.9A, Single N-Channel Power MOSFET
Products specifications
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.25 W |
Configuration | Single |
Qg - Gate Charge | 11 nC |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 4.5 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 27 mOhms |
Technology | Si |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 4.9 A |
Packaging | Cut Tape, MouseReel, Reel |
Vds - Drain-Source Breakdown Voltage | 20 V |