MOSFETs 60V, 44A, Single N-Channel Power MOSFET
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 83 W |
Technology | Si |
Qg - Gate Charge | 28 nC |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 1.8 V |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 20 mOhms |
Configuration | Single |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 44 A |
Transistor Polarity | N-Channel |