MOSFETs 60V, 50A, Single N-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Qg - Gate Charge | 28 nC |
Packaging | Cut Tape, Reel |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 50 A |
Vds - Drain-Source Breakdown Voltage | 60 V |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 53 W |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 20 mOhms |