TSM2309CX RFG

MOSFET -60V, -3.1A, Single P-Channel Power MOSFET

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MOSFETs -60V, -3.1A, Single P-Channel Power MOSFET
Lead Time: 112 Days

Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Id - Continuous Drain Current	3.1 A
Configuration	Single
Technology	Si
Packaging	Cut Tape, Reel
Qg - Gate Charge	8.2 nC
Transistor Polarity	P-Channel
Vgs th - Gate-Source Threshold Voltage	1.2 V
Rds On - Drain-Source Resistance	160 mOhms
Maximum Operating Temperature	+ 50 C
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	1.56 W
Vds - Drain-Source Breakdown Voltage	60 V

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Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Id - Continuous Drain Current	3.1 A
Configuration	Single
Technology	Si
Packaging	Cut Tape, Reel
Qg - Gate Charge	8.2 nC
Transistor Polarity	P-Channel
Vgs th - Gate-Source Threshold Voltage	1.2 V
Rds On - Drain-Source Resistance	160 mOhms
Maximum Operating Temperature	+ 50 C
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	1.56 W
Vds - Drain-Source Breakdown Voltage	60 V