MOSFETs 60V, 3A, Single N-Channel Power MOSFET
Products specifications
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Qg - Gate Charge | 3.99 nC |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Pd - Power Dissipation | 1.25 W |
Rds On - Drain-Source Resistance | 130 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 3 A |
Technology | Si |