MOSFETs 30V, 3.5A, Single N-Channel Power MOSFET
Products specifications
Rds On - Drain-Source Resistance | 46 mOhms |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Packaging | Cut Tape, Reel |
Id - Continuous Drain Current | 3.5 A |
Pd - Power Dissipation | 1.25 W |
Qg - Gate Charge | 4.2 nC |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 30 V |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Configuration | Single |