MOSFETs -20V, -3.2A, Single P-Channel Power MOSFET
Products specifications
Vgs th - Gate-Source Threshold Voltage | 450 mV |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Qg - Gate Charge | 10 nC |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - Gate-Source Voltage | 4.5 V |
Id - Continuous Drain Current | 3.2 A |
Pd - Power Dissipation | 1.25 W |
Transistor Polarity | P-Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 44 mOhms |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |