MOSFET 30V P channel Mosfet
Products specifications
Rds On - Drain-Source Resistance | 150 mOhms |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Packaging | Cut Tape, Reel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Qg - Gate Charge | 10 nC |
Transistor Polarity | P-Channel |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 700 mW |
Configuration | Single |
Id - Continuous Drain Current | 1.3 A |
Channel Mode | Enhancement |