MOSFETs 20V, 3.9A, Single N-Channel Power MOSFET
Products specifications
Technology | Si |
Pd - Power Dissipation | 1.25 W |
Vgs th - Gate-Source Threshold Voltage | 650 mV |
Rds On - Drain-Source Resistance | 40 mOhms |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 2.8 A |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Qg - Gate Charge | 5.4 nC |
Vgs - Gate-Source Voltage | 4.5 V |