MOSFET 20V P channel MOSFET
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 2.8 A |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 80 mOhms |
Transistor Polarity | P-Channel |
Vgs th - Gate-Source Threshold Voltage | 450 mV |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 4.5 V |
Configuration | Single |
Pd - Power Dissipation | 900 mW |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 5.8 nC |
Vds - Drain-Source Breakdown Voltage | 20 V |
Maximum Operating Temperature | + 150 C |