MOSFETs -20V, -2.8A, Single P-Channel Power MOSFET
Products specifications
Qg - Gate Charge | 7.2 nC |
Pd - Power Dissipation | 700 mW |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Technology | Si |
Vgs - Gate-Source Voltage | 4.5 V |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 90 mOhms |
Id - Continuous Drain Current | 2.8 A |
Transistor Polarity | P-Channel |