MOSFETs 60V, 35A, Single N-Channel Power MOSFET
Products specifications
Id - Continuous Drain Current | 35 A |
Maximum Operating Temperature | + 175 C |
Qg - Gate Charge | 23 nC |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 22 mOhms |
Packaging | Reel |
Vgs - Gate-Source Voltage | 20 V |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Pd - Power Dissipation | 68 W |
Number of Channels | 1 Channel |
Technology | Si |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |