MOSFETs 20V, 6.7A, Single N-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Number of Channels | 1 Channel |
Configuration | Single |
Pd - Power Dissipation | 1.56 W |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 20 V |
Packaging | Cut Tape, Reel |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 6.7 A |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 5.8 nC |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 4.5 V |
Rds On - Drain-Source Resistance | 19 mOhms |
Vgs th - Gate-Source Threshold Voltage | 300 mV |