TSM200N03DPQ33 RGG

MOSFETs 30V, 20A, Dual N-Channel Power MOSFET
Lead Time: 112 Days

SKU: TSM200N03DPQ33 RGG

Availability: 9464 in stock

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MOSFETs 30V, 20A, Dual N-Channel Power MOSFET
Lead Time: 112 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vds - Drain-Source Breakdown Voltage	30 V
Pd - Power Dissipation	20 W
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	4.1 nC
Technology	Si
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	17 mOhms
Configuration	Dual
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Channel Mode	Enhancement

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Products specifications

Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vds - Drain-Source Breakdown Voltage	30 V
Pd - Power Dissipation	20 W
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	4.1 nC
Technology	Si
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	17 mOhms
Configuration	Dual
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Channel Mode	Enhancement