TSM1NB60CW RPG

MOSFETs 600V, 1A, Single N-Channel Power MOSFET
Lead Time: 98 Days

SKU: TSM1NB60CW RPG

Availability: 6563 in stock

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MOSFETs 600V, 1A, Single N-Channel Power MOSFET
Lead Time: 140 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	6.1 nC
Maximum Operating Temperature	+ 150 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	8 Ohms
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	1 A
Pd - Power Dissipation	2.1 W
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Cut Tape, Reel
Vgs - Gate-Source Voltage	10 V

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Products specifications

Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	6.1 nC
Maximum Operating Temperature	+ 150 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	8 Ohms
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	1 A
Pd - Power Dissipation	2.1 W
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Cut Tape, Reel
Vgs - Gate-Source Voltage	10 V