MOSFETs 600V, 1A, Single N-Channel Power MOSFET
Lead Time: 140 Days
Products specifications
Rds On - Drain-Source Resistance | 8 Ohms |
Packaging | Cut Tape, Reel |
Qg - Gate Charge | 6.1 nC |
Pd - Power Dissipation | 39 W |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 1 A |
Maximum Operating Temperature | + 150 C |