TSM1NB60CH C5G

MOSFET 600V 1A N Channel Mosfet

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15000+

Price

R 6.14

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MOSFETs 600V, 1A, Single N-Channel Power MOSFET

Products specifications

Transistor Polarity	N-Channel
Technology	Si
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	8 Ohms
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	6.1 nC
Configuration	Single
Id - Continuous Drain Current	1 A
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Packaging	Tube
Pd - Power Dissipation	39 W
Vgs th - Gate-Source Threshold Voltage	2.5 V

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Products specifications

Transistor Polarity	N-Channel
Technology	Si
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	8 Ohms
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	6.1 nC
Configuration	Single
Id - Continuous Drain Current	1 A
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Packaging	Tube
Pd - Power Dissipation	39 W
Vgs th - Gate-Source Threshold Voltage	2.5 V