MOSFET 800V N Channel Power Mosfet
Products specifications
Transistor Polarity | N-Channel |
Qg - Gate Charge | 5 nC |
Vds - Drain-Source Breakdown Voltage | 800 V |
Technology | Si |
Configuration | Single |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 18 Ohms |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 2.1 W |
Number of Channels | 1 Channel |
Packaging | Cut Tape, Reel |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Id - Continuous Drain Current | 300 mA |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |