MOSFETs 75V, 190A, Single N-Channel Power MOSFET
Products specifications
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 160 nC |
Rds On - Drain-Source Resistance | 3.4 mOhms |
Id - Continuous Drain Current | 190 A |
Technology | Si |
Packaging | Tube |
Pd - Power Dissipation | 250 W |
Vgs - Gate-Source Voltage | 10 V |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 75 V |
Configuration | Single |