MOSFETs -30V, -10A, Single P-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Packaging | Cut Tape, Reel |
Qg - Gate Charge | 14.6 nC |
Vds - Drain-Source Breakdown Voltage | 30 V |
Transistor Polarity | P-Channel |
Technology | Si |
Id - Continuous Drain Current | 10 A |
Pd - Power Dissipation | 2.5 W |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Rds On - Drain-Source Resistance | 14 mOhms |
Channel Mode | Enhancement |