MOSFETs 60V, 38A, Single N-Channel Power MOSFET
Products specifications
Configuration | Single |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 60 V |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Technology | Si |
Pd - Power Dissipation | 46 W |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Rds On - Drain-Source Resistance | 15 mOhms |
Qg - Gate Charge | 15 nC |
Id - Continuous Drain Current | 38 A |