MOSFET Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm
Products specifications
Qg - Gate Charge | 154 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 300 W |
Technology | Si |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 10 V |
Rds On - Drain-Source Resistance | 4.5 mOhms |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 160 A |
Vds - Drain-Source Breakdown Voltage | 100 V |
Packaging | Tube |
Maximum Operating Temperature | + 175 C |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Configuration | Single |