MOSFET 100V N Channel Power Mosfet
Products specifications
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 154 nC |
Id - Continuous Drain Current | 160 A |
Technology | Si |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Packaging | Tube |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 300 W |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 4.5 mOhms |