TSM160N10CZ

MOSFETs Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm

SKU: TSM160N10CZ

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R 31.89

R 31.10

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MOSFETs Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm

Products specifications

Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	300 W
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	160 A
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Rds On - Drain-Source Resistance	4.5 mOhms
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Technology	Si
Qg - Gate Charge	154 nC
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	300 W
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	160 A
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Rds On - Drain-Source Resistance	4.5 mOhms
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Technology	Si
Qg - Gate Charge	154 nC
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Configuration	Single
Channel Mode	Enhancement