MOSFET 500V N channel Power Mosfet
Products specifications
Technology | Si |
Maximum Operating Temperature | + 150 C |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Voltage | 10 V |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 350 mOhms |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 14 A |
Qg - Gate Charge | 39 nC |
Channel Mode | Enhancement |
Configuration | Single |