TSM150P03PQ33 RGG

MOSFETs -30, -36, Single P-Channel

SKU: TSM150P03PQ33 RGG

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MOSFETs -30, -36, Single P-Channel

Products specifications

Configuration	Single
Rds On - Drain-Source Resistance	13 mOhms
Channel Mode	Enhancement
Qg - Gate Charge	29.3 nC
Packaging	Reel
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	1.2 V
Id - Continuous Drain Current	36 A
Technology	Si
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	27.8 W
Number of Channels	1 Channel

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Products specifications

Configuration	Single
Rds On - Drain-Source Resistance	13 mOhms
Channel Mode	Enhancement
Qg - Gate Charge	29.3 nC
Packaging	Reel
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	1.2 V
Id - Continuous Drain Current	36 A
Technology	Si
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Pd - Power Dissipation	27.8 W
Number of Channels	1 Channel