MOSFET 60V 51A 13mOhm N-Chan Pwr MOSFET
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 83 W |
Rds On - Drain-Source Resistance | 13 mOhms |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 36 nC |
Vds - Drain-Source Breakdown Voltage | 60 V |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 51 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |