MOSFET 600V 30mA N-Channel Depletion Mode
Products specifications
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Transistor Polarity | N-Channel |
Channel Mode | Depletion |
Packaging | Cut Tape, MouseReel, Reel |
Number of Channels | 1 Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 400 Ohms |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Id - Continuous Drain Current | 30 mA |
Qg - Gate Charge | 1.18 nC |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |