MOSFETs 60V, 23A, Single N-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 10.4 mOhms |
Technology | Si |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 12.5 W, 2.2 W |
Number of Channels | 1 Channel |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 37 nC |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 23 A |